Gpo3 Laminate Resistivity

The method and characteristics of 2100kev high energy vanadium injection into the semi insulating layer of gpo3 laminate were studied. The concentration distribution of the injected layer was simulated by Monte Carlo analysis software trim Using a mesa structure for gpo3, it is found that the resistivity of the vanadium implanted layer is closely related to the initial conductivity type of gpo3 layer At room temperature, the resistivity of vanadium implanted p-type and n-type 4H SiC is 1.6, respectively × 10^10 and 7.6 × 10^6 Ω· cm The resistivity at different annealing temperatures is measured. It is found that high temperature annealing is conducive to vanadium substitution activation and increase the resistivity. Due to the influence of vanadium diffusion, the resistivity decreases slightly after annealing at 1700 ℃ The resistivity of n-type SiC vanadium implanted layer at 20 ~ 140 ℃ was measured. The activation energy of vanadium acceptor level in 4H SiC was calculated to be 0.78ev